? semiconductor components industries, llc, 2009 august, 2009 ? rev. 2 1 publication order number: bcw32lt1/d bcw32lt1g general purpose transistors npn silicon features ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector-emitter voltage v ceo 32 vdc collector-base voltage v cbo 32 vdc emitter-base voltage v ebo 5.0 vdc collector current ? continuous i c 100 madc stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal characteristics characteristic symbol value unit total device dissipation fr-5 board (1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction ? to ? ambient r ja 556 c/w total device dissipation alumina substrate, (2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction ? to ? ambient r ja 417 c/w junction and storage temperature t j , t stg ? 55 to +150 c 1. fr ? 5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. device package shipping ? ordering information sot ? 23 (to ? 236ab) case 318 style 6 marking diagram 1 2 3 collector 3 1 base 2 emitter bcw32lt1g sot ? 23 (pb ? free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. http://onsemi.com 1 d2 m d2 = device code m = date code* =pb ? free package (note: microdot may be in either location) *date code orientation and/or overbar may vary depending upon manufacturing location.
bcw32lt1g http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage (i c = 2.0 madc, v eb = 0) v (br)ceo 32 ? ? vdc collector ? base breakdown voltage (i c = 10 adc, i e = 0) v (br)cbo 32 ? ? vdc emitter ? base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 5.0 ? ? vdc collector cutoff current (v cb = 32 vdc, i e = 0) (v cb = 32 vdc, i e = 0, t a = 100 c) i cbo ? ? ? ? 100 10 nadc adc on characteristics dc current gain (i c = 2.0 madc, v ce = 5.0 vdc) h fe 200 ? 450 ? collector ? emitter saturation voltage (i c = 10 madc, i b = 0.5 madc) v ce(sat) ? ? 0.25 vdc base ? emitter on voltage (i c = 2.0 madc, v ce = 5.0 vdc) v be(on) 0.55 ? 0.70 vdc small ? signal characteristics output capacitance (i e = 0, v cb = 10 vdc, f = 1.0 mhz) c obo ? ? 4.0 pf noise figure (i c = 0.2 madc, v ce = 5.0 vdc, r s = 2.0 k , f = 1.0 khz, bw = 200 hz) nf ? ? 10 db typical noise characteristics (v ce = 5.0 vdc, t a = 25 c) figure 1. noise voltage f, frequency (hz) 5.0 7.0 10 20 3.0 figure 2. noise current f, frequency (hz) 2.0 10 20 50 100 200 500 1k 2k 5k 10k 100 50 20 10 5.0 2.0 1.0 0.5 0.2 0.1 bandwidth = 1.0 hz r s = 0 i c = 1.0 ma 100 a e n , noise voltage (nv) i n , noise current (pa) 30 a bandwidth = 1.0 hz r s ? 10 a 300 a i c = 1.0 ma 300 a 100 a 30 a 10 a 10 20 50 100 200 500 1k 2k 5k 10k
bcw32lt1g http://onsemi.com 3 noise figure contours (v ce = 5.0 vdc, t a = 25 c) figure 3. narrow band, 100 hz i c , collector current ( a) 500k figure 4. narrow band, 1.0 khz i c , collector current ( a) 10 2.0 db bandwidth = 1.0 hz r s , source resistance (ohms) r s , source resistance (ohms) figure 5. wideband i c , collector current ( a) 10 10 hz to 15.7 khz r s , source resistance (ohms) noise figure is defined as: nf 20 log 10 e n 2 4ktr s i n 2 r s 2 4ktr s 1 2 = noise voltage of the t ransistor referred to the input. (figure 3) = noise current of the transistor referred to the input. (figure 4) = boltzman?s constant (1.38 x 10 ? 23 j/ k) = temperature of the source resistance ( k) = source resistance ( ) e n i n k t r s 3.0 db 4.0 db 6.0 db 10 db 50 100 200 500 1k 10k 5k 20k 50k 100k 200k 2k 20 30 50 70 100 200 300 500 700 1k 10 20 30 50 70 100 200 300 500 700 1k 500k 100 200 500 1k 10k 5k 20k 50k 100k 200k 2k 1m 500k 50 100 200 500 1k 10k 5k 20k 50k 100k 200k 2k 20 30 50 70 100 200 300 500 700 1k bandwidth = 1.0 hz 1.0 db 2.0 db 3.0 db 5.0 db 8.0 db 1.0 db 2.0 db 3.0 db 5.0 db 8.0 db
bcw32lt1g http://onsemi.com 4 typical static characteristics figure 6. dc current gain i c , collector current (ma) 400 0.004 h , dc current gain fe t j = 125 c -55 c 25 c v ce = 1.0 v v ce = 10 v figure 7. collector saturation region i c , collector current (ma) 1.4 figure 8. collector characteristics i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 1.6 100 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 1.0 v * vc for v ce(sat) vb for v be 0.1 0.2 0.5 figure 9. ?on? voltages i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0 v ce , collector-emitter voltage (volts) 0.002 t j = 25 c i c = 1.0 ma 10 ma 100 ma figure 10. temperature coefficients 50 ma v ce , collector-emitter voltage (volts) 40 60 80 100 20 0 0 i c , collector current (ma) t a = 25 c pulse width = 300 s duty cycle 2.0% i b = 500 a 400 a 300 a 200 a 100 a *applies for i c /i b h fe /2 25 c to 125 c -55 c to 25 c 25 c to 125 c -55 c to 25 c 40 60 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40 1.2 1.0 0.8 0.6 0.4 0.2 0 -2.4 0.8 0 -1.6 -0.8 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 200 100 80 v , temperature coefficients (mv/ c)
bcw32lt1g http://onsemi.com 5 typical dynamic characteristics c, capacitance (pf) figure 11. capacitance v r , reverse voltage (volts) 10 1.0 2.0 3.0 5.0 7.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0.05 t j = 25 c f = 1.0 mhz c ib c ob
bcw32lt1g http://onsemi.com 6 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue an d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318 ? 01 thru ? 07 and ? 09 obsolete, new standard 318 ? 08. view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h style 6: pin 1. base 2. emitter 3. collector 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. bcw32lt1/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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